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| MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA MII 3 IC25 = 180 A VCES = 1200 V VCE(sat) typ. = 2.2 V MID 3 MDI 3 1 2 3 11 10 9 8 8 9 1 1 8 9 1 11 10 2 11 10 2 2 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 10 W, non repetitive VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 1200 1200 20 30 180 120 240 10 ICM = 200 VCEK < VCES 760 150 -40 ... +150 V V V V A A A ms A E 72873 Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W q C C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz. q space and weight savings reduced protection circuits 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Insulating material: Al2O3 Mounting torque (module) (teminals) 4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 10 9.6 50 250 8.8 Typical Applications q q Md q q AC and DC motor control AC servo and robot drives power supplies welding inverters dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Data according to a single IGBT/FRED unless otherwise stated. (c) 2000 IXYS All rights reserved 1-4 030 MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 11 6.5 V V Dimensions in mm (1 mm = 0.0394") V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS VGE = 0 V IC = 4 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 100 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 7.5 mA mA 400 nA 2.2 6.6 1 0.44 100 70 500 70 15 11.5 0.33 2.7 V nF nF nF ns ns ns ns mJ mJ Inductive load, TJ = 125C IC = 100 A, VGE = 15 V VCE = 600 V, RG = 10 W with heatsink compound 0.17 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.3 1.8 2.5 1.9 200 130 80 200 0.66 V V A A A ns 0.33 K/W K/W Conduction VF IF IRM trr RthJC RthJS IF = 100 A, VGE = 0 V, IF = 100 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 100 A, VGE = 0 V, -diF/dt = 800 A/ms TJ = 125C, VR = 600 V with heatsink compound IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.5 V; R0 = 10.2 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 5.5 mW Thermal Response IGBT (typ.) Cth1 = 0.27 J/K; Rth1 = 0.163 K/W Cth2 = 0.63 J/K; Rth2 = 0.004 K/W Free Wheeling Diode (typ.) Cth1 = 0.19 J/K; Rth1 = 0.326 K/W Cth2 = 0.36 J/K; Rth2 = 0.007 K/W (c) 2000 IXYS All rights reserved 2-4 MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 250 A 250 TJ = 25C VGE=17V 15V 13V 11V A 200 IC 150 100 TJ = 125C VGE=17V 15V 13V 11V 200 IC 150 100 50 0 0.0 9V 9V 50 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 250 VCE = 20V A 200 IC TJ = 25C 350 TJ = 125C A 300 IF 250 200 150 100 TJ = 25C 150 100 50 0 5 6 7 8 9 10 VGE 50 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 120 20 V VGE 15 300 ns trr VCE = 600V IC = 100A A IRM trr 80 200 10 40 5 IRM TJ = 125C VR = 600V IF = 100A 100 150-12 0 0 100 200 300 400 QG 500 nC 0 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 60 td(on) mJ Eon tr Eon VCE = 600V VGE = 15V RG = 10W TJ = 125C 120 ns 80 t Eoff 30 mJ td(off) Eoff 600 ns 400 t 40 20 20 40 10 VCE = 600V VGE = 15V RG = 10W TJ = 125C 200 tf 0 0 50 100 150 IC 200 A 0 0 0 50 100 150 IC 200 A 0 Fig. 7 Typ. turn on energy and switching times versus collector current 50 VCE = 600V mJ 40 Eon 250 ns 200 t 150 Fig. 8 Typ. turn off energy and switching times versus collector current 20 mJ Eoff 15 VCE = 600V VGE = 15V IC = 100A TJ = 125C td(on) Eon tr 1600 Eoff td(off) 800 ns 1200 t VGE = 15V IC = 100A TJ = 125C 30 20 10 0 0 8 16 24 32 RG 10 100 50 0 56 5 tf 400 40 48 W 0 0 8 16 24 32 RG 40 48 W 56 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 240 A 200 ICM 1 K/W 0.1 ZthJC RG = 10W TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 160 120 80 40 0 0 200 400 600 800 1000 1200 V VCE diode 0.01 0.001 0.0001 IGBT single pulse 150-12 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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